US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Dec. 9 for "Method and structure for forming stairs in three-dimensional memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,495,555, issued on Dec. 9, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Method and structure for forming stairs in three-dimensional memory devices" was invented by Xinxin Liu (Wuhan, China), Jingjing Geng (Wuhan, China), Zhu Yang (Wuhan, China), Chen Zuo (Wuhan, China) and Xiangning Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of a three-dimensional (3D) memory device and fabrication methods thereof are disclosed. In an example, a 3D memory device includes a memory stack having a plurality of stairs. Each stair may include interleaved one or more conductor layers and one or more dielectric layers...