US Patent Issued to Yangtze Memory Technologies on Dec. 9 for "Memory with separate drivers for word lines and select gates" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,252, issued on Dec. 9, was assigned to Yangtze Memory Technologies Co. LTD. (Wuhan, China).

"Memory with separate drivers for word lines and select gates" was invented by Li Xiang (Hubei, China), Wei Huang (Hubei, China) and Chunyuan Hou (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present application disclose a memory, a storage system and an electronic product. The memory comprises a control circuit, a voltage loading circuit, a first driver, and a second driver. The voltage loading circuit, in response to a block selection signal received by a control terminal, is configured to load a first voltage to a control term...