ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,259, issued on Dec. 9, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).
"Erase operations in memory devices" was invented by Jinlong Zhang (Wuhan, China), Jianyu Xiang (Wuhan, China), Jing Wei (Wuhan, China), Lei Guan (Wuhan, China), Junyao Zhu (Wuhan, China), Yuankang Yang (Wuhan, China), Qingqi Li (Wuhan, China) and Xueqing Huang (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "Example memory devices, systems, and methods for reducing erase disturb in memory devices are disclosed. One example method includes erasing, during an erase operation of a block in a memory cell array, one or more memory cells in the block. I...