US Patent Issued to Yangtze Memory Technologies on Dec. 30 for "Three-dimensional NAND memory device having word line contact with dielectric filler" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,906, issued on Dec. 30, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional NAND memory device having word line contact with dielectric filler" was invented by Linchun Wu (Wuhan, China), Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device semiconductor device includes a stack having a first surface and a second surface opposing the first surface. The stack can include word line layers and insulating layers alternating with the word line layers between the first surface and the second s...