US Patent Issued to Yangtze Memory Technologies on Dec. 30 for "Three-dimensional memory device and method of forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,905, issued on Dec. 30, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory device and method of forming the same" was invented by Tingting Gao (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "According to an aspect of the disclosure, a semiconductor device is provided. The semiconductor device includes a stack structure of alternating insulating layers and word line layers, a first top select gate (TSG) layer over the stack structure, and a separation structure extending through the first TSG layer, where the first TSG layer is divid...