US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Dec. 30 for "Non-volatile memory device and control method" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,145, issued on Dec. 30, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Non-volatile memory device and control method" was invented by Jianquan Jia (Wuhan, China), Ying Cui (Wuhan, China) and Kaikai You (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory device includes a memory string, a select gate line coupled to the memory string, word lines coupled to the memory string and including a selected word line, and a control circuit coupled to the select gate line and the word lines, and configured to apply word line pre-pulse signals to at least two groups of the word lines disposed between the sel...