US Patent Issued to Yangtze Memory Technologies on Dec. 30 for "Memory system and operation method thereof, and readable storage medium" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,164, issued on Dec. 30, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Memory system and operation method thereof, and readable storage medium" was invented by Teng Zhou (Wuhan, China), Qian Sun (Wuhan, China), Xiaodong Xu (Wuhan, China), Wen Luo (Wuhan, China) and Yuzhe Chi (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory system, an operation method thereof and a readable storage medium are provided according to examples of this disclosure. The memory system including: a memory device including a plurality of memory blocks, each of which including a plurality of word lines and a plurality of memory cells ...