US Patent Issued to Yangtze Memory Technologies on Dec. 30 for "Memory devices and operation methods thereof, and memory systems for managing page buffer" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,511,052, issued on Dec. 30, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory devices and operation methods thereof, and memory systems for managing page buffer" was invented by Fan Yang (Hubei, China), Ning Zhang (Hubei, China) and Ke Liang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of the present disclosure provide a memory device and an operation method thereof, and a memory system. The memory device includes: a memory cell array including memory cells, wherein the memory cells are divided into memory planes; bit lines; page buffer circuits, wherein each of the page buffer circuits includes page b...