US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Dec. 30 for "Memory device and method for performing cache program on memory device" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,159, issued on Dec. 30, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and method for performing cache program on memory device" was invented by Xiaojiang Guo (Wuhan, China), Bo Li (Wuhan, China) and Jinchi Han (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a method for programming a memory device includes caching first program data and preparing first program information, performing a first program operation using the first program data and the first program information, during the first program operation, caching a second program data in a first cache latch and preparing second...