US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Dec. 23 for "Three-dimensional memories having isolation structures and fabrication methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,507,404, issued on Dec. 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memories having isolation structures and fabrication methods thereof" was invented by Xiaolong Du (Wuhan, China), Tingting Gao (Wuhan, China), Zhiliang Xia (Wuhan, China), Changzhi Sun (Wuhan, China), Jiayi Liu (Wuhan, China) and Xiaoxin Liu (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The three-dimensional memory includes a stack structure which includes: a first stack and a second stack, the first stack including control gate layers and first dielectric layers which are stacked alternately, the second stack including top ...