ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,034, issued on Dec. 23, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).
"Memory system and operation method thereof" was invented by Byoungwoon Lee (Wuhan, China) and Jiawei Chen (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "An example of the present application provides a memory system and an operation method thereof. In one example, the memory system includes a memory device; the operation method may include: in response to a write duty cycle adjustment (WDCA) being performed for a data strobe (DQS) signal of the memory device, configuring an adjustment code that adjusts the duty cycle of the DQS signal; the adj...