US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Dec. 23 for "Memory device and its operating method, memory system and operating method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,035, issued on Dec. 23, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device and its operating method, memory system and operating method thereof" was invented by Xingwei Tang (Wuhan, China), Guangchang Ye (Wuhan, China) and Lu Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An example of the present application discloses a memory device and operating method thereof, a memory system and operating method thereof, wherein the memory device includes: an array of memory cells; a peripheral circuit coupled to the array of memory cells and configured to: obtain a first result corresponding to a target locati...