US Patent Issued to Yangtze Memory Technologies on Dec. 23 for "Memory device, operation method thereof, and readable storage medium" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,893, issued on Dec. 23, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Memory device, operation method thereof, and readable storage medium" was invented by Wenping Chen (Wuhan, China), Yaoyao Tian (Wuhan, China), Da Li (Wuhan, China), Wei Qi (Wuhan, China), Shuai Zhang (Wuhan, China) and Hua Tan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Examples of present disclosure disclose a memory device and an operation method thereof, and a readable storage medium. The memory device includes: a first memory region and a second memory region, each including a plurality of memory cells; and a peripheral circuit coupled ...