US Patent Issued to Yangtze Memory Technologies on Dec. 23 for "Erase and program operations for memory devices having multiple storage modes" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,504,887, issued on Dec. 23, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Erase and program operations for memory devices having multiple storage modes" was invented by Yi Zhang (Wuhan, China), Lei Guan (Wuhan, China), Hongtao Liu (Wuhan, China), Xiaojiang Guo (Wuhan, China), Chenhui Li (Wuhan, China), Jialiang Deng (Wuhan, China) and Zhenjia Chen (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods, systems, and apparatus, including computer programs encoded on computer storage media, for operating a memory device having multiple storage modes. In one example method, a portion of a memory array is selected, where...