US Patent Issued to Yangtze Memory Technologies on Dec. 16 for "Three-dimensional memory devices with stack structures, and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,614, issued on Dec. 16, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Three-dimensional memory devices with stack structures, and fabricating methods thereof" was invented by Zhong Zhang (Hubei, China), Kun Zhang (Hubei, China) and Wenxi Zhou (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Three-dimensional memory devices and fabricating methods therefore are disclosed. The memory device can comprise a stack structure comprising a plurality of gate layers, a plurality of first insulating layers, and a plurality of second insulating layers. The stack structure has a staircase region comprising a plurality of stair...