US Patent Issued to Yangtze Memory Technologies on Dec. 16 for "Memory system, semiconductor device and fabrication method therefor" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,616, issued on Dec. 16, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Memory system, semiconductor device and fabrication method therefor" was invented by LinChun Wu (Hubei, China), CuiCui Kong (Hubei, China), ZhiLiang Xia (Hubei, China) and ZongLiang Huo (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a stack of conductive layers and insulating layers stacked alternatingly in a first direction. The stack of conductive layers and insulating layers has a first side and a second side in the first direction. The semiconductor...