US Patent Issued to Yangtze Memory Technologies on Dec. 16 for "Memory devices and operating methods thereof, memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,499,949, issued on Dec. 16, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Memory devices and operating methods thereof, memory systems" was invented by Jianquan Jia (Wuhan, China), XiangNan Zhao (Wuhan, China), Feng Xu (Wuhan, China), Yuanyuan Min (Wuhan, China), Ying Cui (Wuhan, China), Chenhui Li (Wuhan, China), Wei Qi (Wuhan, China), Junbao Wang (Wuhan, China) and Lei Jin (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a memory device, a memory system, and an operation method of a memory device, and relates to the technical field of semiconductor chips. The memory device includes a ...