ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,111, issued on Aug. 5, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).
"Wafer bonding method and bonded wafer" was invented by Chao Wang (Wuhan, China), Youdong Jiang (Wuhan, China), Yulong Zhang (Wuhan, China) and Zhiyong Suo (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of wafer bonding includes: forming a first hole in a first insulation layer disposed over a first substrate; performing a first deposition-self-etch process to deposit a first conductive material in the first hole to form a first conductive plug; forming a second hole in a second insulation layer disposed over a second substrate; performi...