US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 26 for "Three-dimensional non-volatile memory floorplan architecture" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,699, issued on Aug. 26, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional non-volatile memory floorplan architecture" was invented by Ying Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory includes a first semiconductor structure having a 3D memory array, wherein the 3D memory array includes a plurality of memory planes, and a second semiconductor structure having a plurality of page buffer circuits, wherein each memory plane has a plurality of bit lines oriented in a bit line direction, a memory-plane-boundary, and a fixed location on the first semiconductor struc...