US Patent Issued to Yangtze Memory Technologies on Aug. 26 for "Three-dimensional memory devices and fabricating methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,309, issued on Aug. 26, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Three-dimensional memory devices and fabricating methods thereof" was invented by Liang Chen (Hubei, China), Lei Xue (Hubei, China), Wei Liu (Hubei, China) and Shi Qi Huang (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a gate structure of a 3D memory device is provided. The method comprises forming an etch stop structure in a first wafer, forming a first through contact in contact with the etch stop structure, bonding the first wafer to a second wafer to electrically connect the first through contact to a CMOS device of t...