US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 26 for "Methods for forming three-dimensional memory device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,313, issued on Aug. 26, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Methods for forming three-dimensional memory device" was invented by Kun Zhang (Wuhan, China), Wenxi Zhou (Wuhan, China), Zhiliang Xia (Wuhan, China) and Zongliang Huo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a method for forming a 3D memory device comprises forming a channel structure extending vertically through a memory stack into a semiconductor layer on a substrate. The memory stack comprises interleaved stack conducti...