ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,751, issued on Aug. 19, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).
"Method of forming semiconductor structure" was invented by Xinsheng Wang (Wuhan, China), Li Zhang (Wuhan, China), Gaosheng Zhang (Wuhan, China), Xianjin Wan (Wuhan, China), Ziqun Hua (Wuhan, China), Jiawen Wang (Wuhan, China), Taotao Ding (Wuhan, China), Hongbin Zhu (Wuhan, China), Weihua Cheng (Wuhan, China) and Shining Yang (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention relates to a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a first substrate, and a bonding layer loc...