ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,171, issued on Aug. 19, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).
"Method of fabricating three-dimensional NAND memory" was invented by Yaqin Liu (Hubei, China), Kun Zhang (Hubei, China), Linchun Wu (Hubei, China) and Wenxi Zhou (Hubei, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes forming a dielectric stack on a substrate, and forming a first opening penetrating through the dielectric stack and extending into the substrate from a first side of the dielectric stack. The method also includes forming a firs...