US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 12 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,388,036, issued on Aug. 12, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices and methods for forming the same" was invented by Liang Chen (Wuhan, China), Wei Liu (Wuhan, China), Yanhong Wang (Wuhan, China), Zhiliang Xia (Wuhan, China), Wenxi Zhou (Wuhan, China), Kun Zhang (Wuhan, China) and Yuancheng Yang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a three-dimensional (3D) memory device includes a first semiconductor structure, a second semiconductor structure, and a bonding interface between the first semiconductor structure and the second semiconductor structure...