US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 12 for "Three-dimensional memory device and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,603, issued on Aug. 12, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory device and method for forming the same" was invented by Liang Chen (Wuhan, China), Shiqi Huang (Wuhan, China), Wei Liu (Wuhan, China) and Yanhong Wang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional (3D) memory device includes a plurality of memory stacks arranged along a first direction, and a dummy block structure disposed between two adjacent memory stacks. Each memory stack includes a plurality of first conductive layers and a plurality of first dielectric layers alternately stacked along a secon...