US Patent Issued to Yangtze Memory Technologies on Aug. 12 for "Structure and method for forming capacitors for a three-dimensional NAND" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,611, issued on Aug. 12, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Structure and method for forming capacitors for a three-dimensional NAND" was invented by Liang Chen (Hubei, China), Cheng Gan (Hubei, China), Wei Liu (Hubei, China) and Shunfu Chen (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of a three-dimensional capacitor for a memory device and fabrication methods are disclosed. The method includes forming, on a first side of a first substrate, a peripheral circuitry having a plurality of peripheral devices, a first interconnect layer, a deep well and a first capacitor electrode. The method ...