US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 12 for "Methods for programming a memory device, memory devices, and memory systems" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,794, issued on Aug. 12, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Methods for programming a memory device, memory devices, and memory systems" was invented by Ke Jiang (Wuhan, China), Xiaodong Mei (Wuhan, China) and Xiaojiang Guo (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for programming a memory device, a memory device, and a memory system are disclosed. The memory device includes planes. The method includes: programming the planes by using a programming voltage incremented with a first step size; verifying the planes, and in response to determining that one or more planes are with a verificati...