US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 12 for "Memory device, memory system, and method for data calculation with the memory device" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,386,550, issued on Aug. 12, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory device, memory system, and method for data calculation with the memory device" was invented by Yue Sheng (Wuhan, China), Shu Xie (Wuhan, China) and Weijun Wan (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device, a memory system, and a method for data calculation with the memory device are provided. The memory device includes an array of memory cells and a peripheral circuit coupled to the memory cells is provided. The peripheral circuit includes page buffers configured to store first data transmitted from a data interface of ...