US Patent Issued to Yangtze Memory Technologies on April 8 for "Method for reading three-dimensional flash memory" (Chinese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,410, issued on April 8, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Method for reading three-dimensional flash memory" was invented by Zilong Chen (Hubei, China) and Xiang Fu (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for conducting a read-verification operation on a target memory cell in a three-dimensional (3D) memory device includes removing fast charges of the target memory cell at a read-prepare step and measuring a threshold voltage of the target memory cell at a sensing step. Removing the fast charges of the target memory cell includes applying a prepare voltage (Vprepare) on an unselected ...