US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 8 for "Memory peripheral circuit having three-dimensional transistors and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,066, issued on April 8, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Memory peripheral circuit having three-dimensional transistors and method for forming the same" was invented by Chao Sun (Wuhan, China), Liang Chen (Wuhan, China), Wu Tian (Wuhan, China), Wenshan Xu (Wuhan, China), Wei Liu (Wuhan, China), Ning Jiang (Wuhan, China) and Lei Xue (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a memory device includes an array of memory cells, a plurality of word lines coupled to the array of memory cells, and a plurality of peripheral circuits coupled to the array of memory cells and configured...