US Patent Issued to Yangtze Memory Technologies on April 22 for "Three-dimensional NAND memory and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,322, issued on April 22, was assigned to Yangtze Memory Technologies Co. Ltd. (Hubei, China).

"Three-dimensional NAND memory and fabrication method thereof" was invented by Linchun Wu (Hubei, China), Kun Zhang (Hubei, China) and Wenxi Zhou (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for forming a three-dimensional (3D) memory device. The method includes disposing an alternating dielectric stack over a substrate, wherein the alternating dielectric stack includes first dielectric layers and second dielectric layers alternatingly stacked on the substrate. The method also includes forming a channe...