US Patent Issued to Yangtze Memory Technologies on April 22 for "Contact structures for three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 6 -- United States Patent no. 12,283,547, issued on April 22, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Contact structures for three-dimensional memory devices and methods for forming the same" was invented by Di Wang (Hubei, China), Zhong Zhang (Hubei, China) and Wenxi Zhou (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a three-dimensional (3D) memory device includes first and second memory arrays disposed on a semiconductor layer. The 3D memory device can also include a staircase structure disposed between the first and second memory arrays. The staircase structure includes first and second staircase regions. T...