US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 15 for "Three-dimensional memory devices with supporting structure for staircase region and spacer structure for contact structure and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,429, issued on April 15, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Three-dimensional memory devices with supporting structure for staircase region and spacer structure for contact structure and methods for forming the same" was invented by Cuicui Kong (Wuhan, China), Zhong Zhang (Wuhan, China), Linchun Wu (Wuhan, China), Kun Zhang (Wuhan, China) and Wenxi Zhou (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of 3D memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a memory stack, a semiconductor layer, a supporting structure, a spacer structure,...