US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 15 for "Peripheral circuit having recess gate transistors and method for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,209, issued on April 15, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Peripheral circuit having recess gate transistors and method for forming the same" was invented by Yanwei Shi (Wuhan, China), Yanhong Wang (Wuhan, China), Cheng Gan (Wuhan, China), Liang Chen (Wuhan, China), Wei Liu (Wuhan, China), Zhiliang Xia (Wuhan, China), Wenxi Zhou (Wuhan, China), Kun Zhang (Wuhan, China) and Yuancheng Yang (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "In certain aspects, a method for forming a three-dimensional (3D) memory device is disclosed. A first semiconductor structure including an array of NAND memory strings is...