US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on April 15 for "Page buffer circuits in three-dimensional memory devices" (Chinese Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,993, issued on April 15, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).

"Page buffer circuits in three-dimensional memory devices" was invented by Teng Chen (Wuhan, China), Yan Wang (Wuhan, China) and Masao Kuriyama (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A page buffer circuit of a memory device includes a first sensing branch including a first pre-charge path and a low-voltage latch, and a second sensing branch including a second pre-charge path and a sensing latch. The first sensing branch and the second sensing branch are parallel coupled to a sensing node of the page buffer circuit."

The patent was file...