ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,975, issued on April 15, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).
"Non-volatile memory and operating method thereof" was invented by Li Xiang (Wuhan, China) and Weihua Shi (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of operating a non-volatile memory including an unselected word line is provided. A first voltage rising at a first slope is applied by a voltage generator to the unselected word line. Outputting the first voltage is stopped by the voltage generator in response to that the first voltage rises to a predetermined voltage, wherein the predetermined voltage is higher than a pass voltage. T...