ALEXANDRIA, Va., June 5 -- United States Patent no. 12,277,974, issued on April 15, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China).
"Memory device and operation thereof" was invented by Xiaojiang Guo (Wuhan, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A circuit includes a voltage generator and a sensing device. The voltage generator includes a first output and a second output. The first output is configured to output a word line voltage, and the second output is configured to output a flag signal indicates a relationship between the word line voltage and a reference signal. The sensing device includes a first input and a third output. The first input is coupled to the second out...