US Patent Issued to Yangtze Memory Technlogies on Jan. 13 for "Methods for fabricating a layered semiconductor structure for NAND memory devices" (Chinese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,526,993, issued on Jan. 13, was assigned to Yangtze Memory Technlogies Co. Ltd. (Wuhan, China).

"Methods for fabricating a layered semiconductor structure for NAND memory devices" was invented by Qian Li (Hubei, China), Shu Wu (Hubei, China), Liang Xiao (Hubei, China), Lei Li (Hubei, China) and Hao Pu (Hubei, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a fabrication method to produce a semiconductor structure with increased reliability for use in NAND memory devices. The method can include forming a layered semiconductor structure that includes a first layer, a second layer disposed on the first layer, and a thir...