ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,102, issued on Nov. 4, was assigned to XINTEC INC. (Taoyuan, Taiwan).
"Semiconductor device structure and method for forming the same" was invented by Hsiao-Lan Yeh (Tainan, Taiwan), Chin-Kang Chen (Taoyuan, Taiwan), Kung-Hua Cheng (Taoyuan, Taiwan), Szu-Hui Ma Lee (Taoyuan, Taiwan) and Chi-Jia Tong (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a first transparent substrate, a conductive layer, an insulating protective layer, a second transparent substrate, a device substrate, and a bonding layer. The first transparent substrate has a first sur...