US Patent Issued to XILINX on Feb. 3 for "High-voltage based low-power, temperature dependent, thin-oxide only on-chip high current low drop out (LDO) regulator" (Indian, American Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,543,376, issued on Feb. 3, was assigned to XILINX INC. (San Jose, Calif.).

"High-voltage based low-power, temperature dependent, thin-oxide only on-chip high current low drop out (LDO) regulator" was invented by Narendra Kumar Pulipati (Hyderabad, India), Sree Rama Krishna Chaithnya Saraswatula (Hyderabad, India), Santosh Yachareni (Hyderabad, India), Anil Kumar Kandala (Hyderabad, India) and Shidong Zhou (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques to utilize thin-oxide devices, such as gate-all-around metal-oxide-semiconductor field-effect transistors (MOSFETs), in high voltage environments, such as to provide a high-volt...