US Patent Issued to Xidian University on Oct. 28 for "Gan-based device based on patterned ohmic contact and manufacturing method thereof" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,782, issued on Oct. 28, was assigned to Xidian University (Xi'an, China).

"Gan-based device based on patterned ohmic contact and manufacturing method thereof" was invented by Jiejie Zhu (Xi'an, China), Xiaohua Ma (Xi'an, China) and Jingshu Guo (Xi'an, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A GaN-based device based on patterned ohmic contact is provided, including: a substrate layer, a nucleation layer, a buffer layer, a channel layer, an insertion layer, a barrier layer and a cap layer sequentially disposed in that order from bottom to top. Two ends of the cap layer respectively define ohmic contact recesses extending into the channel ...