US Patent Issued to XIAMEN UNIVERSITY on Sept. 30 for "Photoexcitation-free temperature sensing material, preparation method and temperature sensing method" (Chinese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,429,387, issued on Sept. 30, was assigned to XIAMEN UNIVERSITY (Xiamen, China).

"Photoexcitation-free temperature sensing material, preparation method and temperature sensing method" was invented by Yixi Zhuang (Xiamen, China), Changjian Chen (Xiamen, China), Tianliang Zhou (Xiamen, China) and Rongjun Xie (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present application provides a photoexcitation-free temperature sensing material, a preparation method, and a temperature sensing method. The photoexcitation-free temperature sensing material has a general chemical formula of (SrxM1-x)1-y-zZnSO:Tby,Euz, wherein 0less than equal toxless ...