US Patent Issued to Xiamen Tianma Display Technology on Dec. 2 for "Oxide semiconductor thin-film transistor device and method of manufacturing the same" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,490,473, issued on Dec. 2, was assigned to Xiamen Tianma Display Technology Co. Ltd. (Xiamen, China).

"Oxide semiconductor thin-film transistor device and method of manufacturing the same" was invented by Jun Tanaka (Kanagawa, Japan), Kazushige Takechi (Kanagawa, Japan) and Kenji Sera (Kanagawa, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An oxide semiconductor thin-film transistor device includes a gate electrode region, an oxide semiconductor region, a first source/drain electrode region, and a second source/drain electrode region. The oxide semiconductor region has a concentration distribution of an element capable of increasing resistance of...