ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,564, issued on May 27, was assigned to XIAMEN SANAN INTEGRATED CIRCUIT Co. LTD. (Xiamen, China).
"Gallium nitride-based compound semiconductor device" was invented by Shenghou Liu (Xiamen, China) and Wenbi Cai (Xiamen, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A GaN-based compound semiconductor device includes a GaN-based epitaxial structure and an annealed metal layered structure that is formed on the GaN-based epitaxial structure. The annealed metal layered structure includes a metallic barrier layer, a conductive unit, and a protective unit which is formed on a lateral surface of the conductive unit. The metallic barrier layer and the ...