US Patent Issued to XIAMEN SAN'AN OPTOELECTRONICS on Oct. 21 for "Light emitting diode and method for making the same" (Chinese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,453,219, issued on Oct. 21, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Hongtang Town, China).

"Light emitting diode and method for making the same" was invented by Bo-Yu Chen (Xiamen, China), Yu-Tsai Teng (Xiamen, China) and Chung-Ying Chang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode includes an epitaxial unit, a first electrode, and a second electrode. One of the first electrode and the second electrode includes a first reflective layer, a wire-bonding electrode layer, a second reflective layer wrapping a portion of the wire-bonding electrode layer, and a stress adjustment layer which wraps around ...