US Patent Issued to XIAMEN SAN'AN OPTOELECTRONICS on May 27 for "Epitaxial substrate structure, light emitting diode chip including the same, and manufacturing methods thereof" (Chinese Inventors)

ALEXANDRIA, Va., June 17 -- United States Patent no. 12,317,644, issued on May 27, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Xiamen, China).

"Epitaxial substrate structure, light emitting diode chip including the same, and manufacturing methods thereof" was invented by Jianming Liu (Xiamen, China), Taiying Shen (Xiamen, China), Shutao Liao (Xiamen, China), Zhenchao Lin (Xiamen, China), Bing-Yang Chen (Xiamen, China) and Chung-Ying Chang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "An epitaxial substrate structure includes: a patterned substrate unit including a substrate having a top surface and spaced-apart protrusions formed thereon; and a buffer layer disposed on the top sur...