US Patent Issued to XIAMEN SAN'AN OPTOELECTRONICS on June 10 for "Multi-quantum well structure and LED device including the same" (Chinese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,328,973, issued on June 10, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Fujian, China).

"Multi-quantum well structure and LED device including the same" was invented by Han Jiang (Wuhu, China), Yung-Ling Lan (Wuhu, China), Wen-Pin Huang (Wuhu, China), Changwei Song (Wuhu, China), Li-Cheng Huang (Wuhu, China), Feilin Xun (Xiamen, China), Chan-Chan Ling (Wuhu, China), Chi-Ming Tsai (Wuhu, China) and Chia-Hung Chang (Wuhu, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including...