ALEXANDRIA, Va., July 9 -- United States Patent no. 12,356,759, issued on July 8, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD (Xiamen, China).
"High voltage light-emitting device" was invented by Ling-Yuan Hong (Fujian, China), Qing Wang (Fujian, China), Dazhong Chen (Fujian, China), Quanyang Ma (Fujian, China), Su-Hui Lin (Fujian, China) and Chung-Ying Chang (Fujian Province, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness ...