US Patent Issued to XIAMEN SAN'AN OPTOELECTRONICS on July 29 for "Micro light-emitting diode and micro light-emitting device with rough surface and protection layer" (Chinese Inventors)

ALEXANDRIA, Va., July 30 -- United States Patent no. 12,376,428, issued on July 29, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Xiamen, China).

"Micro light-emitting diode and micro light-emitting device with rough surface and protection layer" was invented by Zheng Wu (Xiamen, China), Chia-En Lee (Xiamen, China) and Shuo Yang (Xiamen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A micro light-emitting diode includes a semiconductor stacked structure. The semiconductor stacked structure includes a first surface, a second surface opposite to the first surface, and a lateral surface connecting the first surface and the second surface. The first surface has a roughened portion, and the later...