ALEXANDRIA, Va., July 23 -- United States Patent no. 12,369,435, issued on July 22, was assigned to XIAMEN SAN'AN OPTOELECTRONICS Co. LTD. (Xiamen, China).
"Light-emitting diode" was invented by Su-Hui Lin (Xiamen, China), Sheng-Hsien Hsu (Xiamen, China), Meng-Chun Shen (Xiamen, China), Sihe Chen (Xiamen, China) and Yu-Chieh Huang (Xiamen, China).
According to the abstract* released by the U.S. Patent & Trademark Office: "A light-emitting diode (LED) includes a substrate, an epitaxial structure, and an electrode structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The electrode structure includes electrodes t...